Produkte > DIODES INCORPORATED > DMT15H067SSS-13

DMT15H067SSS-13 Diodes Incorporated

Name: DMT15H067SSS-13
Brand: Diodes Incorporated
SKU: 63859581-3
Price: 18.81 EUR
Availability: InStock

Hersteller: Diodes Incorporated
Description: MOSFET N-CH 150V 4.5A/13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V

auf Bestellung 2088 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
9+	2.09 EUR
14+	1.32 EUR
100+	0.87 EUR
500+	0.68 EUR
1000+	0.62 EUR

Mindestbestellmenge: 9 Stücke

Im Einkaufswagen Stück im Wert von UAH

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Technische Details DMT15H067SSS-13 Diodes Incorporated

Description: MOSFET N-CH 150V 4.5A/13A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote DMT15H067SSS-13

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	DMT15H067SSS-13	Diodes Incorporated	Description: MOSFET N-CH 150V 4.5A/13A 8SO Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR)	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH
	DMT15H067SSS-13	Diodes Incorporated	MOSFETs MOSFET BVDSS: 101V~250V SO-8 T&R 2.5K	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH

DMT15H067SSS-13

Hersteller: Diodes Incorporated
Description: MOSFET N-CH 150V 4.5A/13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

DMT15H067SSS-13

Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 101V~250V SO-8 T&R 2.5K

Produkt ist nicht verfügbar

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH