DMT2004UPS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 24V 80A PWRDI5060-8
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.38 EUR |
| 5000+ | 0.35 EUR |
| 7500+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT2004UPS-13 Diodes Incorporated
Description: MOSFET N-CH 24V 80A PWRDI5060-8, Grade: Automotive, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 1.45V @ 250µA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Drain to Source Voltage (Vdss): 24 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V.
Weitere Produktangebote DMT2004UPS-13 nach Preis ab 0.36 EUR bis 1.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMT2004UPS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
DMT2004UPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 24V 80A PWRDI5060-8Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 1.45V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 12350 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMT2004UPS-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 1410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.56 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.38 EUR |
| 5000+ | 0.36 EUR |
| DMT2004UPS-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 24V 80A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 24V 80A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 12350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 18+ | 0.98 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.45 EUR |


