DMT3020LDT-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.5A 8VDFN
Supplier Device Package: V-DFN3030-8 (Type K)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 670mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.35 EUR |
| 3000+ | 0.32 EUR |
| 4500+ | 0.31 EUR |
| 7500+ | 0.29 EUR |
| 10500+ | 0.28 EUR |
| 15000+ | 0.27 EUR |
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Technische Details DMT3020LDT-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.5A 8VDFN, Supplier Device Package: V-DFN3030-8 (Type K), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 670mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMT3020LDT-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMT3020LDT-7 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT3020LDT-7 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K
MOSFET MOSFET BVDSS: 25V-30V V-DFN3030-8 T&R 1.5K
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH