DMT3022UEV-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 17A POWERDI3333, Supplier Device Package: PowerDI3333-8 (Type UXD), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).