DMT4008LFDF-7 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.13 EUR |
| 100+ | 0.84 EUR |
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Technische Details DMT4008LFDF-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6, Case: U-DFN2020-6, Kind of channel: enhancement, Drain-source voltage: 40V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: SMD, Power dissipation: 0.8W, Gate charge: 17.1nC, Drain current: 11.8A.
Weitere Produktangebote DMT4008LFDF-7 nach Preis ab 0.44 EUR bis 0.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| DMT4008LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6 Case: U-DFN2020-6 Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Power dissipation: 0.8W Gate charge: 17.1nC Drain current: 11.8A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| DMT4008LFDF-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6
Case: U-DFN2020-6
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Power dissipation: 0.8W
Gate charge: 17.1nC
Drain current: 11.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 11.8A; 800mW; U-DFN2020-6
Case: U-DFN2020-6
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Power dissipation: 0.8W
Gate charge: 17.1nC
Drain current: 11.8A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.44 EUR |