DMT6005LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 82500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.69 EUR |
| 5000+ | 0.67 EUR |
| 7500+ | 0.66 EUR |
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Technische Details DMT6005LPS-13 Diodes Incorporated
Description: MOSFET N-CHA 60V 17.9A POWERDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V, Power Dissipation (Max): 2.6W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT6005LPS-13 nach Preis ab 0.71 EUR bis 1.19 EUR
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DMT6005LPS-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 10343 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6005LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CHA 60V 17.9A POWERDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Power Dissipation (Max): 2.6W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 83121 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6005LPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT6005LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 125 A, 0.0035 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 125A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0035ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 1633 Stücke: Lieferzeit 14-21 Tag (e) |
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DMT6005LPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 17.9A 8-Pin PowerDI 5060 T/R |
Produkt ist nicht verfügbar |
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| DMT6005LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 14.7A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 47.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 500A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMT6005LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 14.7A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 47.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 500A |
Produkt ist nicht verfügbar |