DMT6005LSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.94 EUR |
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Technische Details DMT6005LSS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V.
Weitere Produktangebote DMT6005LSS-13 nach Preis ab 1.03 EUR bis 3.43 EUR
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DMT6005LSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 13.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V |
auf Bestellung 9225 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT6005LSS-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 802 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMT6005LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 1.7W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 13.5A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 47.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMT6005LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 1.7W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 13.5A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 47.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |