Produkte > DIODES INCORPORATED > DMT6005LSS-13

DMT6005LSS-13 Diodes Incorporated


DMT6005LSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.39 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMT6005LSS-13 Diodes Incorporated

Description: MOSFET N-CH 60V 13.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V.

Weitere Produktangebote DMT6005LSS-13 nach Preis ab 2.09 EUR bis 4.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMT6005LSS-13 DMT6005LSS-13 Diodes Incorporated DMT6005LSS.pdf MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.8 EUR
10+2.59 EUR
100+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LSS-13 DMT6005LSS-13 Diodes Incorporated DMT6005LSS.pdf Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 3813 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.88 EUR
10+3.12 EUR
25+2.64 EUR
50+2.36 EUR
100+2.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LSS-13 DMT6005LSS.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.8 EUR
10+2.59 EUR
100+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMT6005LSS-13 DMT6005LSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 3813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.12 EUR
25+2.64 EUR
50+2.36 EUR
100+2.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH