DMT6006LK3-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMT6006LK3-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252, Case: TO252, Kind of package: 13 inch reel; tape, Mounting: SMD, Drain-source voltage: 60V, Drain current: 71A, On-state resistance: 10mΩ, Type of transistor: N-MOSFET, Power dissipation: 3.1W, Polarisation: unipolar, Gate charge: 34.9nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 350A, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMT6006LK3-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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DMT6006LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V TO252 T&R |
Produkt ist nicht verfügbar |
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| DMT6006LK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K |
Produkt ist nicht verfügbar |
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| DMT6006LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 71A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 34.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 350A |
Produkt ist nicht verfügbar |