Technische Details DMT6006LK3-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252, Case: TO252, Kind of package: 13 inch reel; tape, Pulsed drain current: 350A, Power dissipation: 3.1W, Gate charge: 34.9nC, Polarisation: unipolar, Drain current: 71A, Kind of channel: enhancement, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD.
Weitere Produktangebote DMT6006LK3-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMT6006LK3-13 | Diodes Incorporated |
 MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
DMT6006LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Pulsed drain current: 350A Power dissipation: 3.1W Gate charge: 34.9nC Polarisation: unipolar Drain current: 71A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT6006LK3-13 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K
MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT6006LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Pulsed drain current: 350A
Power dissipation: 3.1W
Gate charge: 34.9nC
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Pulsed drain current: 350A
Power dissipation: 3.1W
Gate charge: 34.9nC
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH