DMT6009LPS-13 Diodes Zetex
auf Bestellung 52500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT6009LPS-13 Diodes Zetex
Description: MOSFET N-CHA 60V 10.6A POWERDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMT6009LPS-13 nach Preis ab 0.61 EUR bis 1.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMT6009LPS-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CHA 60V 10.6A POWERDIPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 130000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DMT6009LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CHA 60V 10.6A POWERDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 132826 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMT6009LPS-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 2525 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMT6009LPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 87 A, 0.0072 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 87A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 113W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 1982 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
DMT6009LPS-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMT6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 87 A, 0.0072 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 87A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 113W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 1982 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
DMT6009LPS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
DMT6009LPS-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
DMT6009LPS-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 10.6A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| DMT6009LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 9.1A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 160A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| DMT6009LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 9.1A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 160A |
Produkt ist nicht verfügbar |