DMT6017LFDF-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 24+ | 0.89 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
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Technische Details DMT6017LFDF-7 Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V.
Weitere Produktangebote DMT6017LFDF-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DMT6017LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 65V 8.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DMT6017LFDF-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT6017LFDF-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Description: MOSFET N-CH 65V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT6017LFDF-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K
MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH