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DMT6017LFDF-7

DMT6017LFDF-7 Diodes Incorporated

DMT6017LFDF.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
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24+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
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Technische Details DMT6017LFDF-7 Diodes Incorporated

Description: MOSFET N-CH 65V 8.1A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMT6017LFDF-7

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DMT6017LFDF-7 DMT6017LFDF-7 Diodes Incorporated DMT6017LFDF.pdf Description: MOSFET N-CH 65V 8.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6017LFDF-7 DMT6017LFDF-7 Diodes Incorporated DMT6017LFDF.pdf MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6017LFDF-7 DMT6017LFDF.pdf
DMT6017LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMT6017LFDF-7 DMT6017LFDF.pdf
DMT6017LFDF-7
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH