DMT8012LFG-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT8012LFG-13 Diodes Incorporated
Description: MOSFET N-CH 80V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V, Power Dissipation (Max): 2.2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V.
Weitere Produktangebote DMT8012LFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMT8012LFG-13 | Diodes Incorporated |
MOSFETs 80V N-Ch Enh FET 20Vgs 9.5A 1949pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT8012LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 80A Power dissipation: 2.2W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 34nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMT8012LFG-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
MOSFETs 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMT8012LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 80A
Power dissipation: 2.2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 80A
Power dissipation: 2.2W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH