DMTH10H005LCT Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 150+ | 1.87 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
150 Stücke
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Technische Details DMTH10H005LCT Diodes Zetex
Description: MOSFET N-CH 100V 140A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220AB, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H005LCT nach Preis ab 2.15 EUR bis 7.08 EUR
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DMTH10H005LCT | Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 61V-100V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H005LCT | Diodes Incorporated |
Description: MOSFET N-CH 100V 140A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H005LCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 140A; Idm: 150A; 187W; TO220AB Pulsed drain current: 150A Power dissipation: 187W Gate charge: 114nC Polarisation: unipolar Drain current: 140A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 5mΩ Mounting: THT |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMTH10H005LCT |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V
MOSFETs MOSFET BVDSS: 61V-100V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.68 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.89 EUR |
| 500+ | 2.56 EUR |
| 1000+ | 2.39 EUR |
| 2500+ | 2.23 EUR |
| 5000+ | 2.15 EUR |
| DMTH10H005LCT |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.08 EUR |
| 10+ | 4.62 EUR |
| 25+ | 3.96 EUR |
| DMTH10H005LCT |
|
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; Idm: 150A; 187W; TO220AB
Pulsed drain current: 150A
Power dissipation: 187W
Gate charge: 114nC
Polarisation: unipolar
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; Idm: 150A; 187W; TO220AB
Pulsed drain current: 150A
Power dissipation: 187W
Gate charge: 114nC
Polarisation: unipolar
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)