Technische Details DMTH10H009LPSQ-13 Diodes Zetex
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 11A, Pulsed drain current: 360A, Power dissipation: 3.1W, Case: PowerDI5060-8, Gate-source voltage: ±20V, On-state resistance: 12.5mΩ, Mounting: SMD, Gate charge: 40.2nC, Kind of package: 13 inch reel; tape, Kind of channel: enhancement, Application: automotive industry.
Weitere Produktangebote DMTH10H009LPSQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMTH10H009LPSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMTH10H009LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Pulsed drain current: 360A Power dissipation: 3.1W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 40.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMTH10H009LPSQ-13 |
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMTH10H009LPSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 360A
Power dissipation: 3.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 40.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 360A
Power dissipation: 3.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 40.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH