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DMTH10H025LK3Q-13

DMTH10H025LK3Q-13 Diodes Incorporated

DMTH10H025LK3Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 51.7A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.7A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
5000+0.65 EUR
12500+0.62 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH10H025LK3Q-13 Diodes Incorporated

Description: MOSFET N-CH 100V 51.7A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51.7A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote DMTH10H025LK3Q-13 nach Preis ab 0.67 EUR bis 2.25 EUR

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DMTH10H025LK3Q-13 DMTH10H025LK3Q-13 Hersteller : Diodes Incorporated DMTH10H025LK3Q.pdf Description: MOSFET N-CH 100V 51.7A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.7A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1477 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 17370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
14+1.34 EUR
100+1.05 EUR
500+0.89 EUR
1000+0.72 EUR
Mindestbestellmenge: 11
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DMTH10H025LK3Q-13 DMTH10H025LK3Q-13 Hersteller : Diodes Incorporated DMTH10H025LK3Q-1382399.pdf MOSFETs MOSFET BVDSS: 61V-100V
auf Bestellung 5625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.25 EUR
10+1.48 EUR
100+1.02 EUR
500+0.85 EUR
1000+0.76 EUR
2500+0.67 EUR
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DMTH10H025LK3Q-13 Hersteller : DIODES INCORPORATED DMTH10H025LK3Q.pdf DMTH10H025LK3Q-13 SMD N channel transistors
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