DMTH10H1M7STLWQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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Technische Details DMTH10H1M7STLWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: POWERDI1012-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V.
Weitere Produktangebote DMTH10H1M7STLWQ-13 nach Preis ab 4.03 EUR bis 9.03 EUR
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DMTH10H1M7STLWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K |
auf Bestellung 1380 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H1M7STLWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI10 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: POWERDI1012-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 6W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 85113 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH10H1M7STLWQ-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.62 EUR |
| 10+ | 6.27 EUR |
| 100+ | 4.82 EUR |
| 1000+ | 4.1 EUR |
| DMTH10H1M7STLWQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 61V~100V POWERDI10
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 85113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.03 EUR |
| 10+ | 6.41 EUR |
| 100+ | 4.74 EUR |
| 500+ | 4.03 EUR |