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DMTH10H1M7STLWQ-13

DMTH10H1M7STLWQ-13 Diodes Zetex

dmth10h1m7stlwq.pdf Hersteller: Diodes Zetex
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package.
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+3.58 EUR
Mindestbestellmenge: 1500
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Technische Details DMTH10H1M7STLWQ-13 Diodes Zetex

Description: MOSFET BVDSS: 61V~100V POWERDI10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 6W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: POWERDI1012-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH10H1M7STLWQ-13 nach Preis ab 4.03 EUR bis 9.03 EUR

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DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ-13 Hersteller : Diodes Incorporated DMTH10H1M7STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+4.03 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ-13 Hersteller : Diodes Incorporated DMTH10H1M7STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 85113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.03 EUR
10+6.41 EUR
100+4.74 EUR
500+4.03 EUR
Mindestbestellmenge: 2
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DMTH10H1M7STLWQ-13 Hersteller : Diodes Incorporated DMTH10H1M7STLWQ.pdf MOSFET MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.69 EUR
10+7.30 EUR
25+6.90 EUR
100+5.91 EUR
250+5.58 EUR
500+5.26 EUR
1000+4.51 EUR
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DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ-13 Hersteller : Diodes Inc dmth10h1m7stlwq.pdf Trans MOSFET N-CH 100V 250A Automotive AEC-Q101 T/R
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DMTH10H1M7STLWQ-13 Hersteller : DIODES INCORPORATED DMTH10H1M7STLWQ.pdf DMTH10H1M7STLWQ-13 SMD N channel transistors
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