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DMTH10H1M7STLWQ-13 Diodes Zetex


dmth10h1m7stlwq.pdf
Hersteller: Diodes Zetex
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package.
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1500+4.21 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH10H1M7STLWQ-13 Diodes Zetex

Description: MOSFET BVDSS: 61V~100V POWERDI10, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: POWERDI1012-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V.

Weitere Produktangebote DMTH10H1M7STLWQ-13 nach Preis ab 4.8 EUR bis 10.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ-13 Diodes Incorporated DMTH10H1M7STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+4.8 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ-13 Diodes Incorporated DMTH10H1M7STLWQ.pdf MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.26 EUR
10+7.46 EUR
100+5.74 EUR
1000+4.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ-13 Diodes Incorporated DMTH10H1M7STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 85113 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.75 EUR
10+7.63 EUR
100+5.64 EUR
500+4.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+4.8 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+10.26 EUR
10+7.46 EUR
100+5.74 EUR
1000+4.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H1M7STLWQ-13 DMTH10H1M7STLWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: POWERDI1012-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 85113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.75 EUR
10+7.63 EUR
100+5.64 EUR
500+4.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH