DMTH10H4M5LPSWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI50, Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V.