DMTH10H4M5LPSWQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.24 EUR |
| 10+ | 3.4 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.94 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Technische Details DMTH10H4M5LPSWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 107A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H4M5LPSWQ-13 nach Preis ab 1.61 EUR bis 4.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMTH10H4M5LPSWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH10H4M5LPSWQ-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K
MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.75 EUR |
| 10+ | 3.07 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.74 EUR |
| 2500+ | 1.61 EUR |