DMTH15H017LPSWQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2500+ | 1.24 EUR |
| 5000+ | 1.16 EUR |
| 7500+ | 1.13 EUR |
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Technische Details DMTH15H017LPSWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V POWERDI5, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.5W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH15H017LPSWQ-13 nach Preis ab 1.28 EUR bis 4.17 EUR
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DMTH15H017LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 101V~250V POWERDI5 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V Qualification: AEC-Q101 |
auf Bestellung 10213 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH15H017LPSWQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 2452 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH15H017LPSWQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 101V~250V POWERDI5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 10213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 10+ | 2.7 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.38 EUR |
| DMTH15H017LPSWQ-13 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8/SWP T&R 2.5K
MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 2452 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.92 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.95 EUR |
| 250+ | 1.8 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.47 EUR |
| 2500+ | 1.28 EUR |