Technische Details DMTH3004LFG-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W, Mounting: SMD, Pulsed drain current: 250A, Power dissipation: 2.5W, Gate charge: 44nC, Polarisation: unipolar, Drain current: 10A, Kind of channel: enhanced, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Kind of package: reel; tape, Case: PowerDI3333-8, On-state resistance: 8.5mΩ, Gate-source voltage: ±16V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMTH3004LFG-7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMTH3004LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W Mounting: SMD Pulsed drain current: 250A Power dissipation: 2.5W Gate charge: 44nC Polarisation: unipolar Drain current: 10A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 8.5mΩ Gate-source voltage: ±16V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMTH3004LFG-7 | Hersteller : Diodes Incorporated | Description: MOSFET BVDSS: 25V-30V POWERDI333 |
Produkt ist nicht verfügbar |
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DMTH3004LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 250A; 2.5W Mounting: SMD Pulsed drain current: 250A Power dissipation: 2.5W Gate charge: 44nC Polarisation: unipolar Drain current: 10A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 8.5mΩ Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |