DMTH4001STLW-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V PowerDI101, Input Capacitance (Ciss) (Max) @ Vds: 13185 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: POWERDI1012-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6W (Ta), 300W (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Bulk.