DMTH4004LPSQ-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Power dissipation: 2.6W
On-state resistance: 4mΩ
Polarisation: unipolar
Drain current: 21A
Drain-source voltage: 40V
Gate charge: 82.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 100A
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH4004LPSQ-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W, Mounting: SMD, Case: PowerDI5060-8, Kind of package: reel; tape, Power dissipation: 2.6W, On-state resistance: 4mΩ, Polarisation: unipolar, Drain current: 21A, Drain-source voltage: 40V, Gate charge: 82.2nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Pulsed drain current: 100A, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMTH4004LPSQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMTH4004LPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 31V-40V POWERDI506 |
Produkt ist nicht verfügbar |
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DMTH4004LPSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |
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| DMTH4004LPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.6W On-state resistance: 4mΩ Polarisation: unipolar Drain current: 21A Drain-source voltage: 40V Gate charge: 82.2nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 100A |
Produkt ist nicht verfügbar |