Technische Details DMTH4004SCTB-13 Diodes Zetex
Description: MOSFET N-CH 40V 100A TO263AB T&R, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH4004SCTB-13 nach Preis ab 1.05 EUR bis 4.27 EUR
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DMTH4004SCTB-13 | Diodes Zetex |
 Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4004SCTB-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO263AB T&R Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
auf Bestellung 567 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4004SCTB-13 | Diodes Incorporated |
MOSFETs 40V 175c N-Ch FET 3mOhm 10Vgs 100A |
auf Bestellung 356 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4004SCTB-13 |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 5600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.05 EUR |
| DMTH4004SCTB-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.25 EUR |
| 10+ | 2.73 EUR |
| 100+ | 1.84 EUR |
| DMTH4004SCTB-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 40V 175c N-Ch FET 3mOhm 10Vgs 100A
MOSFETs 40V 175c N-Ch FET 3mOhm 10Vgs 100A
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.27 EUR |
| 10+ | 2.75 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.39 EUR |
| 800+ | 1.24 EUR |