DMTH4004SCTBQ-13 Diodes Zetex
auf Bestellung 251200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.01 EUR |
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Technische Details DMTH4004SCTBQ-13 Diodes Zetex
Description: MOSFET N-CH 40V 100A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4004SCTBQ-13 nach Preis ab 1.28 EUR bis 3.61 EUR
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DMTH4004SCTBQ-13 | Hersteller : Diodes Incorporated |
 MOSFETs 40V 175c N-Ch FET 3mOhm 10Vgs 100A |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4004SCTBQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4004SCTBQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH4004SCTBQ-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0025 ohm, TO-263AB, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4004SCTBQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH4004SCTBQ-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0025 ohm, TO-263AB, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4004SCTBQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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DMTH4004SCTBQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| DMTH4004SCTBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB Mounting: SMD Case: TO263AB Kind of package: 13 inch reel; tape Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 4.7W Polarisation: unipolar Gate charge: 68.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V Drain current: 100A On-state resistance: 3mΩ Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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DMTH4004SCTBQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMTH4004SCTBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB Mounting: SMD Case: TO263AB Kind of package: 13 inch reel; tape Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 4.7W Polarisation: unipolar Gate charge: 68.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V Drain current: 100A On-state resistance: 3mΩ |
Produkt ist nicht verfügbar |