| Anzahl | Preis |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.49 EUR |
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Technische Details DMTH4011SPD-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4011SPD-13 nach Preis ab 0.68 EUR bis 2.11 EUR
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DMTH4011SPD-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 40V 11.1A PWRDI50Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 925 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH4011SPD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 14+ | 1.32 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.68 EUR |