Technische Details DMTH4014LPD-13 Diodes Zetex
Description: DIODES INC. - DMTH4014LPD-13 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 43.6 A, 43.6 A, 0.0118 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 43.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 43.6A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0118ohm, Verlustleistung, p-Kanal: 42.8W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: PowerDI5060, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0118ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 42.8W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (15-Jan-2018).
Weitere Produktangebote DMTH4014LPD-13 nach Preis ab 0.51 EUR bis 3.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMTH4014LPD-13 | Diodes Zetex |
 Trans MOSFET N-CH 40V 10.6A 8-Pin PowerDI EP T/R |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4014LPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.6A PWRDI50 Part Status: Active Supplier Device Package: PowerDI5060-8 Qualification: AEC-Q101 Grade: Automotive Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.41W (Ta), 42.8W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 107500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LPD-13 | DIODES INC. |
Description: DIODES INC. - DMTH4014LPD-13 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 43.6 A, 43.6 A, 0.0118 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 43.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 43.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0118ohm Verlustleistung, p-Kanal: 42.8W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0118ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 42.8W Betriebstemperatur, max.: 175°C SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4014LPD-13 | DIODES INC. |
Description: DIODES INC. - DMTH4014LPD-13 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 43.6 A, 43.6 A, 0.0118 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 43.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 43.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0118ohm Verlustleistung, p-Kanal: 42.8W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0118ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 42.8W Betriebstemperatur, max.: 175°C SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH4014LPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 10.6A PWRDI50 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.41W (Ta), 42.8W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerDI5060-8 Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 107508 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4014LPD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4014LPD-13 |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 40V 10.6A 8-Pin PowerDI EP T/R
Trans MOSFET N-CH 40V 10.6A 8-Pin PowerDI EP T/R
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.51 EUR |
| DMTH4014LPD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.41W (Ta), 42.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.41W (Ta), 42.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.62 EUR |
| 5000+ | 0.56 EUR |
| 7500+ | 0.55 EUR |
| 12500+ | 0.54 EUR |
| DMTH4014LPD-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH4014LPD-13 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 43.6 A, 43.6 A, 0.0118 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 43.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 43.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0118ohm
Verlustleistung, p-Kanal: 42.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerDI5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0118ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 42.8W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMTH4014LPD-13 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 43.6 A, 43.6 A, 0.0118 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 43.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 43.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0118ohm
Verlustleistung, p-Kanal: 42.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerDI5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0118ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 42.8W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 2.34 EUR |
| 129+ | 1.81 EUR |
| 203+ | 1.06 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.82 EUR |
| DMTH4014LPD-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH4014LPD-13 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 43.6 A, 43.6 A, 0.0118 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 43.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 43.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0118ohm
Verlustleistung, p-Kanal: 42.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerDI5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0118ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 42.8W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMTH4014LPD-13 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 43.6 A, 43.6 A, 0.0118 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 43.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 43.6A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0118ohm
Verlustleistung, p-Kanal: 42.8W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerDI5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0118ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 42.8W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 2.34 EUR |
| 129+ | 1.81 EUR |
| 203+ | 1.06 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.82 EUR |
| DMTH4014LPD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.41W (Ta), 42.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 40V 10.6A PWRDI50
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.41W (Ta), 42.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerDI5060-8
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 107508 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 14+ | 1.51 EUR |
| 100+ | 1 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| DMTH4014LPD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V
MOSFETs MOSFET BVDSS: 31V-40V
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.93 EUR |
| 2500+ | 0.83 EUR |
| 5000+ | 0.79 EUR |