Technische Details DMTH4014LPSWQ-13 Diodes Zetex
Description: MOSFET BVDSS: 31V~40V POWERDI506, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 4W (Ta), 46.9W (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH4014LPSWQ-13 nach Preis ab 0.42 EUR bis 0.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMTH4014LPSWQ-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 31V~40V POWERDI506Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 (Type UX) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 4W (Ta), 46.9W (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH4014LPSWQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4W (Ta), 46.9W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.43 EUR |
| 7500+ | 0.42 EUR |