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DMTH41M2SPSQ-13

DMTH41M2SPSQ-13 Diodes Incorporated

DMTH41M2SPSQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
10+3.82 EUR
100+3.09 EUR
500+2.75 EUR
1000+2.35 EUR
Mindestbestellmenge: 4
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Technische Details DMTH41M2SPSQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V, Power Dissipation (Max): 3.4W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH41M2SPSQ-13 nach Preis ab 2.16 EUR bis 4.66 EUR

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DMTH41M2SPSQ-13 DMTH41M2SPSQ-13 Hersteller : Diodes Incorporated DMTH41M2SPSQ-3103837.pdf MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8 T&R 2.5K
auf Bestellung 2276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.66 EUR
10+3.48 EUR
100+2.53 EUR
500+2.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH41M2SPSQ-13 DMTH41M2SPSQ-13 Hersteller : Diodes Incorporated DMTH41M2SPSQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11085 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH