Produkte > DIODES INCORPORATED > DMTH43M8LFGQ-13
DMTH43M8LFGQ-13

DMTH43M8LFGQ-13 Diodes Incorporated

DMTH43M8LFGQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.18 EUR
13+1.38 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMTH43M8LFGQ-13 Diodes Incorporated

Description: MOSFET N-CH 40V PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote DMTH43M8LFGQ-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMTH43M8LFGQ-13 DMTH43M8LFGQ-13 Diodes Incorporated DMTH43M8LFGQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH43M8LFGQ-13 DMTH43M8LFGQ.pdf
DMTH43M8LFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH