| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.83 EUR |
| 2000+ | 0.77 EUR |
| 4000+ | 0.73 EUR |
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Technische Details DMTH43M8LFGQ-7 Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote DMTH43M8LFGQ-7 nach Preis ab 0.65 EUR bis 2.18 EUR
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DMTH43M8LFGQ-7 | Diodes Incorporated |
 Description: MOSFET N-CH 40V PWRDI3333FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH43M8LFGQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V PWRDI3333
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.18 EUR |
| 13+ | 1.38 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |