DMTH43M8LK3Q-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.72 EUR |
| 5000+ | 0.67 EUR |
| 7500+ | 0.64 EUR |
| 12500+ | 0.62 EUR |
| 17500+ | 0.6 EUR |
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Technische Details DMTH43M8LK3Q-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 88W (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH43M8LK3Q-13 nach Preis ab 0.55 EUR bis 2.64 EUR
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DMTH43M8LK3Q-13 | Diodes Incorporated |
MOSFETs MOSFETBVDSS: 31V-40V |
auf Bestellung 12921 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH43M8LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 40V 100A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 88W (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 164380 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH43M8LK3Q-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFETBVDSS: 31V-40V
MOSFETs MOSFETBVDSS: 31V-40V
auf Bestellung 12921 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.66 EUR |
| 2500+ | 0.58 EUR |
| 5000+ | 0.55 EUR |
| DMTH43M8LK3Q-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 164380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.64 EUR |
| 11+ | 1.68 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.8 EUR |