DMTH46M7SFVWQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI333, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).