Produkte > DIODES INCORPORATED > DMTH46M7SFVWQ-7
DMTH46M7SFVWQ-7

DMTH46M7SFVWQ-7 Diodes Incorporated

DMTH46M7SFVWQ-3103835.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V PowerDI3333-8/SWP T&R 2K
auf Bestellung 1469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.16 EUR
10+1.01 EUR
100+0.70 EUR
500+0.58 EUR
1000+0.50 EUR
2000+0.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMTH46M7SFVWQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH46M7SFVWQ-7 nach Preis ab 0.54 EUR bis 1.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Hersteller : Diodes Incorporated DMTH46M7SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
17+1.08 EUR
100+0.73 EUR
500+0.59 EUR
1000+0.54 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMTH46M7SFVWQ-7 DMTH46M7SFVWQ-7 Hersteller : Diodes Incorporated DMTH46M7SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH