DMTH6004SCTB-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 800+ | 2.13 EUR |
| 1600+ | 1.8 EUR |
| 2400+ | 1.71 EUR |
| 5600+ | 1.65 EUR |
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Technische Details DMTH6004SCTB-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH6004SCTB-13 nach Preis ab 1.68 EUR bis 4.7 EUR
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DMTH6004SCTB-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 100A TO263AB Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 23190 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6004SCTB-13 | Diodes Incorporated |
MOSFETs Enh Mode FET 41V to 60V TO263 |
auf Bestellung 829 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH6004SCTB-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 23190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.8 EUR |
| 10+ | 3.16 EUR |
| 100+ | 2.51 EUR |
| DMTH6004SCTB-13 |
|
Hersteller: Diodes Incorporated
MOSFETs Enh Mode FET 41V to 60V TO263
MOSFETs Enh Mode FET 41V to 60V TO263
auf Bestellung 829 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.7 EUR |
| 10+ | 3.17 EUR |
| 100+ | 2.22 EUR |
| 800+ | 1.68 EUR |