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DMTH6004SCTB-13

DMTH6004SCTB-13 Diodes Incorporated

DMTH6004SCTB.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 22400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.13 EUR
1600+1.80 EUR
2400+1.71 EUR
5600+1.65 EUR
Mindestbestellmenge: 800
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Technische Details DMTH6004SCTB-13 Diodes Incorporated

Description: MOSFET N-CH 60V 100A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V, Qualification: AEC-Q101.

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DMTH6004SCTB-13 DMTH6004SCTB-13 Hersteller : Diodes Incorporated DMTH6004SCTB.pdf Description: MOSFET N-CH 60V 100A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 23190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.80 EUR
10+3.16 EUR
100+2.51 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SCTB-13 DMTH6004SCTB-13 Hersteller : Diodes Incorporated DMTH6004SCTB.pdf MOSFETs Enh Mode FET 41V to 60V TO263
auf Bestellung 829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.70 EUR
10+3.17 EUR
100+2.22 EUR
800+1.68 EUR
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DMTH6004SCTB-13 Hersteller : DIODES INCORPORATED DMTH6004SCTB.pdf DMTH6004SCTB-13 SMD N channel transistors
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