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DMTH6004SPS-13

DMTH6004SPS-13 Diodes Incorporated

DMTH6004SPS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.27 EUR
5000+1.22 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH6004SPS-13 Diodes Incorporated

Description: MOSFET N-CH 60V 25A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 2.1W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V.

Weitere Produktangebote DMTH6004SPS-13 nach Preis ab 1.33 EUR bis 3.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMTH6004SPS-13 DMTH6004SPS-13 Diodes Incorporated DMTH6004SPS-3214716.pdf MOSFETs 60V 175c N-Ch FET 20Vgss 21A 2.1W
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.98 EUR
10+3.4 EUR
100+2.78 EUR
500+2.31 EUR
1000+2.04 EUR
2500+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SPS-13 DMTH6004SPS-13 Diodes Incorporated DMTH6004SPS.pdf Description: MOSFET N-CH 60V 25A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SPS-13 DMTH6004SPS-3214716.pdf
DMTH6004SPS-13
Hersteller: Diodes Incorporated
MOSFETs 60V 175c N-Ch FET 20Vgss 21A 2.1W
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.98 EUR
10+3.4 EUR
100+2.78 EUR
500+2.31 EUR
1000+2.04 EUR
2500+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SPS-13 DMTH6004SPS.pdf
DMTH6004SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH