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DMTH6004SPSQ-13

DMTH6004SPSQ-13 Diodes Incorporated

DMTH6004SPSQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.58 EUR
5000+1.52 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH6004SPSQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 100A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 2.1W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V.

Weitere Produktangebote DMTH6004SPSQ-13 nach Preis ab 1.60 EUR bis 3.54 EUR

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DMTH6004SPSQ-13 DMTH6004SPSQ-13 Hersteller : Diodes Incorporated DMTH6004SPSQ.pdf Description: MOSFET N-CH 60V 100A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 65000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.92 EUR
100+2.32 EUR
500+1.97 EUR
1000+1.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SPSQ-13 DMTH6004SPSQ-13 Hersteller : Diodes Incorporated DMTH6004SPSQ-3214425.pdf MOSFETs 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A
auf Bestellung 1208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.54 EUR
10+2.75 EUR
100+1.97 EUR
500+1.63 EUR
1000+1.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SPSQ-13 Hersteller : DIODES INCORPORATED DMTH6004SPSQ.pdf DMTH6004SPSQ-13 SMD N channel transistors
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