
DMTH6005LCT Diodes Incorporated

Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 33950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
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Technische Details DMTH6005LCT Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 2.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6005LCT nach Preis ab 1.22 EUR bis 2.08 EUR
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DMTH6005LCT | Hersteller : Diodes Incorporated |
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auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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