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DMTH6009LK3-13

DMTH6009LK3-13 Diodes Incorporated

DMTH6009LK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.78 EUR
5000+ 0.74 EUR
12500+ 0.71 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH6009LK3-13 Diodes Incorporated

Description: MOSFET N-CH 60V 14.2A/59A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.2W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V.

Weitere Produktangebote DMTH6009LK3-13 nach Preis ab 0.74 EUR bis 1.88 EUR

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DMTH6009LK3-13 DMTH6009LK3-13 Hersteller : Diodes Incorporated DMTH6009LK3.pdf Description: MOSFET N-CH 60V 14.2A/59A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 32168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.87 EUR
12+ 1.54 EUR
100+ 1.19 EUR
500+ 1.01 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
DMTH6009LK3-13 DMTH6009LK3-13 Hersteller : Diodes Incorporated DMTH6009LK3.pdf MOSFET MOSFET BVDSS: 41V-60
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.88 EUR
10+ 1.55 EUR
100+ 1.2 EUR
500+ 1.02 EUR
1000+ 0.83 EUR
2500+ 0.78 EUR
5000+ 0.74 EUR
Mindestbestellmenge: 2
DMTH6009LK3-13 Hersteller : DIODES INCORPORATED DMTH6009LK3.pdf DMTH6009LK3-13 SMD N channel transistors
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