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DMTH6016LFDFW-7

DMTH6016LFDFW-7 Diodes Incorporated

DMTH6016LFDFW.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 9.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.06W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.41 EUR
9000+0.40 EUR
15000+0.39 EUR
Mindestbestellmenge: 3000
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Technische Details DMTH6016LFDFW-7 Diodes Incorporated

Description: MOSFET N-CH 60V 9.4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 1.06W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote DMTH6016LFDFW-7 nach Preis ab 0.41 EUR bis 1.18 EUR

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DMTH6016LFDFW-7 DMTH6016LFDFW-7 Hersteller : Diodes Incorporated DIOD_S_A0004887874_1-2542521.pdf MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K
auf Bestellung 10299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.15 EUR
10+0.99 EUR
100+0.65 EUR
500+0.52 EUR
1000+0.48 EUR
3000+0.41 EUR
Mindestbestellmenge: 3
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DMTH6016LFDFW-7 DMTH6016LFDFW-7 Hersteller : Diodes Incorporated DMTH6016LFDFW.pdf Description: MOSFET N-CH 60V 9.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.06W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 86860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
18+1.03 EUR
100+0.67 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 15
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DMTH6016LFDFW-7 Hersteller : DIODES INCORPORATED DMTH6016LFDFW.pdf DMTH6016LFDFW-7 SMD N channel transistors
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