DMTH6016LFVWQ-7-A Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.17W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.65 EUR |
| 4000+ | 0.61 EUR |
| 6000+ | 0.58 EUR |
| 10000+ | 0.56 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2000 Stücke
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Technische Details DMTH6016LFVWQ-7-A Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Power Dissipation (Max): 1.17W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6016LFVWQ-7-A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMTH6016LFVWQ-7-A | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 41A; 2.38W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Power dissipation: 2.38W Case: PowerDI3333-8 On-state resistance: 16mΩ Mounting: SMD Gate charge: 7.3nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMTH6016LFVWQ-7-A |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; 2.38W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Power dissipation: 2.38W
Case: PowerDI3333-8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 7.3nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; 2.38W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Power dissipation: 2.38W
Case: PowerDI3333-8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 7.3nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH