Produkte > DIODES INCORPORATED > DMTH6016LSDQ-13
DMTH6016LSDQ-13

DMTH6016LSDQ-13 Diodes Incorporated

DMTH6016LSDQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 7.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 155000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.77 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMTH6016LSDQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 7.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V, Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH6016LSDQ-13 nach Preis ab 0.77 EUR bis 2.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMTH6016LSDQ-13 DMTH6016LSDQ-13 Hersteller : Diodes Incorporated DIOD_S_A0002906137_1-2542160.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 3903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.81 EUR
10+1.62 EUR
100+1.24 EUR
500+1.03 EUR
1000+0.81 EUR
2500+0.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6016LSDQ-13 DMTH6016LSDQ-13 Hersteller : Diodes Incorporated DMTH6016LSDQ.pdf Description: MOSFET 2N-CH 60V 7.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 155753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.78 EUR
100+1.20 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6016LSDQ-13 Hersteller : DIODES INCORPORATED DMTH6016LSDQ.pdf DMTH6016LSDQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH