DMWSH120H90SM4Q Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 6347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.63 EUR |
| 30+ | 14.17 EUR |
| 120+ | 10.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMWSH120H90SM4Q Diodes Incorporated
Description: SICFET N-CH 1200V TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote DMWSH120H90SM4Q nach Preis ab 12.67 EUR bis 21.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMWSH120H90SM4Q | Hersteller : Diodes Incorporated |
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
|