Technische Details DN2535N3-G-P003 Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V, Drain to Source Voltage (Vdss): 350 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-92 (TO-226), Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V, Current - Continuous Drain (Id) @ 25°C: 120mA (Tj), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Reel (TR).
Weitere Produktangebote DN2535N3-G-P003 nach Preis ab 1.26 EUR bis 1.65 EUR
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DN2535N3-G-P003 | Microchip Technology |
Description: MOSFET N-CH 350V 120MA TO92 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Drain to Source Voltage (Vdss): 350 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 0V Part Status: Active Supplier Device Package: TO-92 (TO-226) Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Cut Tape (CT) |
auf Bestellung 1981 Stücke: Lieferzeit 10-14 Tag (e) |
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| DN2535N3-G-P003 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-92 (TO-226)
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 350V 120MA TO92
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-92 (TO-226)
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Cut Tape (CT)
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 25+ | 1.36 EUR |
| 100+ | 1.26 EUR |