DN2535N3-G-P003 Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 25+ | 1.36 EUR |
| 100+ | 1.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DN2535N3-G-P003 Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 120mA (Tj), Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V, Power Dissipation (Max): 1W (Tc), Supplier Device Package: TO-92 (TO-226), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote DN2535N3-G-P003 nach Preis ab 1.25 EUR bis 1.66 EUR
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DN2535N3-G-P003 | Hersteller : Microchip Technology |
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auf Bestellung 1851 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N3-G-P003 | Hersteller : Microchip Technology |
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| DN2535N3-G-P003 | Hersteller : Microchip Technology |
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DN2535N3-G-P003 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 350V 120MA TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
Produkt ist nicht verfügbar |