DNA30EM2200PZ-TRL IXYS
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details DNA30EM2200PZ-TRL IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA, Current - Reverse Leakage @ Vr: 40 µA @ 2200 V, Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 2200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AA, Current - Average Rectified (Io): 30A, Capacitance @ Vr, F: 7pF @ 700V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote DNA30EM2200PZ-TRL nach Preis ab 4.81 EUR bis 8.68 EUR
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DNA30EM2200PZ-TRL | Hersteller : IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263AA Current - Reverse Leakage @ Vr: 40 µA @ 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Voltage - DC Reverse (Vr) (Max): 2200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AA Current - Average Rectified (Io): 30A Capacitance @ Vr, F: 7pF @ 700V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1151 Stücke: Lieferzeit 10-14 Tag (e) |
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