DNLS412E-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 12V 4A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1 W
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Technische Details DNLS412E-13 Diodes Incorporated
Description: TRANS NPN 12V 4A SOT-223-3, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: SOT-223-3, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A.
Weitere Produktangebote DNLS412E-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DNLS412E-13 | Diodes Incorporated |
Description: TRANS NPN 12V 4A SOT-223-3 Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: SOT-223-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DNLS412E-13 | Diodes Incorporated |
Bipolar Transistors - BJT NPN 1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DNLS412E-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 12V 4A SOT-223-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A
Description: TRANS NPN 12V 4A SOT-223-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DNLS412E-13 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN 1W
Bipolar Transistors - BJT NPN 1W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH