Technische Details DS1220Y-100IND+ DALLAS
Description: IC NVSRAM 16KBIT PARALLEL 24EDIP, DigiKey Programmable: Not Verified, Memory Organization: 2K x 8, Access Time: 100 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 100ns, Supplier Device Package: 24-EDIP, Memory Format: NVSRAM, Technology: NVSRAM (Non-Volatile SRAM), Voltage - Supply: 4.5V ~ 5.5V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 16Kbit, Mounting Type: Through Hole, Package / Case: 24-DIP Module (0.600", 15.24mm), Packaging: Tube.
Weitere Produktangebote DS1220Y-100IND+
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DS1220Y-100IND | Hersteller : DALLAS | DIP-24 08+09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
