auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 179.19 EUR |
| 11+ | 161.32 EUR |
| 22+ | 157.78 EUR |
| 55+ | 155.92 EUR |
| 110+ | 151.03 EUR |
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Technische Details DS1250AB-100IND+ Maxim Integrated
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP, Packaging: Tube, Package / Case: 32-DIP Module (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 4.75V ~ 5.25V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 32-EDIP, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 512K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote DS1250AB-100IND+
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DS1250AB-100IND | Hersteller : DALLAS |
 2010+ |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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| DS1250AB-100IND | Hersteller : DALLAS |
DIP-32 08+09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DS1250AB-100IND+ | Hersteller : Maxim |
NVRAM NVSRAM Parallel 4Mbit 5V 32-Pin EDIP |
Produkt ist nicht verfügbar |
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| DS1250AB-100IND+ | Hersteller : Analog Devices, Inc. |
NVRAM NVSRAM Parallel 4Mbit 5V 32-Pin EDIP Tube |
Produkt ist nicht verfügbar |
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DS1250AB-100IND | Hersteller : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP Packaging: Tube Package / Case: 32-DIP Module (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.25V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-EDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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DS1250AB-100IND+ | Hersteller : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP Packaging: Tube Package / Case: 32-DIP Module (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.25V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-EDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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DS1250AB-100IND+ | Hersteller : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 4MBIT PARALLEL 32EDIP Packaging: Tube Package / Case: 32-DIP Module (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.25V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-EDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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DS1250AB-100IND+ | Hersteller : Analog Devices / Maxim Integrated |
NVRAM 4096k Nonvolatile SRAM |
Produkt ist nicht verfügbar |