DS1250AB-100IND+ Maxim Integrated

Description: IC NVSRAM 4MBIT PARALLEL 32EDIP, Packaging: Tube, Package / Case: 32-DIP Module (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 4.75V ~ 5.25V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 32-EDIP, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 512K x 8, DigiKey Programmable: Not Verified.