DSC04A065D1-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.88 EUR |
| 5000+ | 0.82 EUR |
| 7500+ | 0.79 EUR |
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Technische Details DSC04A065D1-13 Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 184pF @ 100mV, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-252 (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 170 µA @ 650 V.
Weitere Produktangebote DSC04A065D1-13 nach Preis ab 0.87 EUR bis 3.13 EUR
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DSC04A065D1-13 | Diodes Incorporated |
SiC Schottky Diodes SiC SBD 650V 1000V TO252 T&R 2.5K |
auf Bestellung 2284 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC04A065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 4A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 184pF @ 100mV, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
auf Bestellung 12423 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DSC04A065D1-13 |
|
Hersteller: Diodes Incorporated
SiC Schottky Diodes SiC SBD 650V 1000V TO252 T&R 2.5K
SiC Schottky Diodes SiC SBD 650V 1000V TO252 T&R 2.5K
auf Bestellung 2284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.94 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.91 EUR |
| 2500+ | 0.87 EUR |
| DSC04A065D1-13 |
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Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 12423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 10+ | 2 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |