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DSC04A065D1-13

DSC04A065D1-13 Diodes Incorporated


DSC04A065D1-3103710.pdf Hersteller: Diodes Incorporated
Schottky Diodes & Rectifiers Silicon Carbide Rectifier TO252 T&R 2.5K
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.80 EUR
100+2.36 EUR
500+1.99 EUR
1000+1.70 EUR
2500+1.59 EUR
5000+1.53 EUR
10000+1.51 EUR
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Technische Details DSC04A065D1-13 Diodes Incorporated

Description: DIODE SIL CARBIDE 650V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 184pF @ 100mV, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-252 (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 170 µA @ 650 V.

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DSC04A065D1-13 DSC04A065D1-13 Hersteller : Diodes Incorporated DSC04A065D1.pdf Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 2465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+1.94 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DSC04A065D1-13 DSC04A065D1-13 Hersteller : Diodes Incorporated DSC04A065D1.pdf Description: DIODE SIL CARBIDE 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
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