DSC10C065 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.09 EUR |
| 10+ | 2.39 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DSC10C065 Diodes Incorporated
Description: DIODE SIL CARB 650V 10A TO220AC, Current - Reverse Leakage @ Vr: 230 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO220AC (Type WX), Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 355pF @ 100mV, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote DSC10C065 nach Preis ab 1.59 EUR bis 5.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DSC10C065 | Diodes Incorporated |
 Description: DIODE SIL CARB 650V 10A TO220ACCurrent - Reverse Leakage @ Vr: 230 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO220AC (Type WX) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 355pF @ 100mV, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 241900 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DSC10C065 |
|
Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 650V 10A TO220AC
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO220AC (Type WX)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 355pF @ 100mV, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 10A TO220AC
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO220AC (Type WX)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 355pF @ 100mV, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 241900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.11 EUR |
| 50+ | 2.55 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.71 EUR |
| 2000+ | 1.59 EUR |