DSC10C065 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.53 EUR |
| 10+ | 2.13 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.62 EUR |
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Technische Details DSC10C065 Diodes Incorporated
Description: DIODE SIL CARB 650V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 355pF @ 100mV, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO220AC (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 230 µA @ 650 V.
Weitere Produktangebote DSC10C065 nach Preis ab 1.59 EUR bis 5.11 EUR
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DSC10C065 | Diodes Incorporated |
 Description: DIODE SIL CARB 650V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 355pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
auf Bestellung 241900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DSC10C065 |
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Hersteller: Diodes Incorporated
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 355pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 355pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
auf Bestellung 241900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.11 EUR |
| 50+ | 2.55 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.71 EUR |
| 2000+ | 1.59 EUR |