DSE010-TR-E onsemi
Hersteller: onsemi
Description: DIODE GEN PURP 80V 100MA
Packaging: Bulk
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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Technische Details DSE010-TR-E onsemi
Description: DIODE GEN PURP 80V 100MA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: -55°C ~ 125°C, Current - Average Rectified (Io): 100mA, Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Packaging: Tape & Reel (TR).
Weitere Produktangebote DSE010-TR-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DSE010-TR-E | onsemi |
Description: DIODE GEN PURP 80V 100MA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: -55°C ~ 125°C Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DSE010-TR-E |
Hersteller: onsemi
Description: DIODE GEN PURP 80V 100MA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 80V 100MA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH