
DSM80101M-7 Diodes Incorporated
auf Bestellung 2120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 0.67 EUR |
10+ | 0.58 EUR |
100+ | 0.43 EUR |
500+ | 0.34 EUR |
1000+ | 0.27 EUR |
3000+ | 0.23 EUR |
9000+ | 0.21 EUR |
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Technische Details DSM80101M-7 Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Transistor Type: NPN + Diode (Isolated), Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V, Supplier Device Package: SOT-26, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 600 mW.
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DSM80101M-7 Produktcode: 183366
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DSM80101M-7 | Hersteller : Diodes Incorporated |
Description: TRANS NPN 80V 0.5A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN + Diode (Isolated) Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Supplier Device Package: SOT-26 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 600 mW |
Produkt ist nicht verfügbar |
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DSM80101M-7 | Hersteller : Diodes Incorporated |
Description: TRANS NPN 80V 0.5A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN + Diode (Isolated) Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Supplier Device Package: SOT-26 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 600 mW |
Produkt ist nicht verfügbar |