DSS60601MZ4-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS NPN 60V 6A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.24 EUR |
| 5000+ | 0.23 EUR |
| 12500+ | 0.21 EUR |
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Technische Details DSS60601MZ4-13 Diodes Incorporated
Description: TRANS NPN 60V 6A SOT223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223-3, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.2 W.
Weitere Produktangebote DSS60601MZ4-13 nach Preis ab 0.23 EUR bis 0.72 EUR
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DSS60601MZ4-13 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT |
auf Bestellung 30318 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS60601MZ4-13 | Hersteller : Diodes Incorporated |
Description: TRANS NPN 60V 6A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.2 W |
auf Bestellung 46219 Stücke: Lieferzeit 10-14 Tag (e) |
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| DSS60601MZ4-13 | Hersteller : Diodes Inc./Zetex |
NPN 6A 60V SOT-223 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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DSS60601MZ4-13 Produktcode: 131112 |
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DSS60601MZ4-13 | Hersteller : Diodes Zetex |
Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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DSS60601MZ4-13 | Hersteller : Diodes Zetex |
Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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DSS60601MZ4-13 | Hersteller : Diodes Inc |
Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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DSS60601MZ4-13 | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223 Frequency: 100MHz Kind of package: reel; tape Type of transistor: NPN Pulsed collector current: 12A Collector current: 6A Current gain: 50...360 Collector-emitter voltage: 60V Case: SOT223 Mounting: SMD Polarisation: bipolar Power dissipation: 1.2W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
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DSS60601MZ4-13 | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223 Frequency: 100MHz Kind of package: reel; tape Type of transistor: NPN Pulsed collector current: 12A Collector current: 6A Current gain: 50...360 Collector-emitter voltage: 60V Case: SOT223 Mounting: SMD Polarisation: bipolar Power dissipation: 1.2W |
Produkt ist nicht verfügbar |