DSS8110Y-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-363
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.1 EUR |
| 15000+ | 0.097 EUR |
| 21000+ | 0.093 EUR |
| 30000+ | 0.089 EUR |
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Technische Details DSS8110Y-7 Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-363, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: SOT-363, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote DSS8110Y-7 nach Preis ab 0.088 EUR bis 0.56 EUR
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DSS8110Y-7 | Diodes Incorporated |
Bipolar Transistors - BJT BIPOLAR TRANS NPN |
auf Bestellung 38173 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS8110Y-7 | Diodes Incorporated |
Description: TRANS NPN 100V 1A SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 625 mW |
auf Bestellung 48669 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DSS8110Y-7 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT BIPOLAR TRANS NPN
Bipolar Transistors - BJT BIPOLAR TRANS NPN
auf Bestellung 38173 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.53 EUR |
| 10+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.097 EUR |
| 6000+ | 0.088 EUR |
| DSS8110Y-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
Description: TRANS NPN 100V 1A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
auf Bestellung 48669 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 50+ | 0.35 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |